sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l SBRF10100CTL schottky rectifier applications: switching power supply converters free-wheeling diodes reverse battery protection features: 150 c t j operation center tap configuration low forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistan ce high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request outline drawing mechanical dimensions: in mm option 1(cj) option 2(hd) dim min max min max a 4.4 4.6 4.30 4.70 b 0.6typ 0.50 0.75 b1 1.3typ 1.30 1.40 b2 1.7typ 1.70 1.80 b3 1.6typ 1.50 1.75 b4 1.2typ 1.10 1.35 c 0.60typ 0.50 0.75 d 14.8 15.1 14.80 15.20 e 10.06 10.26 9.96 10.36 e 2.55typ 2.54typ f 2.9 3.1 2.80 3.20 g 6.5 6.9 6.50 6.90 l 12.7 13.7 12.8 13.2 l1 3.4 3.8 3.60 4.00 l2 2.6 3.0 - - q 2.5 2.9 2.50 2.90 q1 2.5 2.9 2.70ref ?r 3.5ref 3.50ref
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l option 3 option 4 dim min max min max a 4.53 4.93 4.50 4.90 b 0.71 0.91 0.70 0.90 b1 1.15 1.39 1.33 1.47 c 0.36 0.53 0.45 0.60 d 15.67 16.07 15.67 16.07 e 9.96 10.36 9.96 10.36 e 2.54typ 2.54 bsc f 2.34 2.76 2.34 2.74 g 6.50 6.90 6.48 6.88 l 12.37 12.77 12.78 13.18 l1 2.23 2.63 3.03 3.43 q 2.56 2.96 2.56 2.96 q1 3.10 3.50 3.10 3.50 ?r 2.98 3.38 3.08 3.28
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l option 5 (sr) ito-220ab
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l marking diagram: where xxxxx is yywwl sbr = device type f = package type 10 = forward current (10a) 100 = reverse voltage (100v) ctl = configuration ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping SBRF10100CTL ito-220ab (pb-free) 50pcs / tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 100 v max. average forward i f(av) 50% duty cycle @t c = 105c, rectangular wave form 10 a max. peak one cycle non- repetitive surge current (per leg) i fsm surge applied at rated load conditions halfwave, single phase,60hz 120 a
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l electrical characteristics: characteristics symbol condition max. units v f1 @ 5 a, pulse, t c = 25 c 0.91 v max. forward voltage drop (per leg) * v f2 @ 5 a, pulse, t c = 125 c 0.74 v max. reverse current (per leg) * i r1 @v r = rated v r t c = 25 c 1.0 ma i r2 @v r = rated v r t c = 125 c 15.0 ma repetitive peak reverse current i rrm tp = 2 s square f= 1 khz 1 a non-repetitive avalanche energy e as t j = 25 c, i as = 5 a, l = 1mh 12.5 mj max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 250 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 8.0 nh max. voltage rate of change dv/dt - 10,000 v/ m s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r q jc dc operation 3.5 c/w approximate weight wt - 2 g case style ito-220ab
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 forward voltage drop-vfm(v) instantaneous forward current-if(a) 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 reverse voltage-vr(v) reverse current-ir(ma) 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse voltage-vr(v) junction capacitance-ct(pf) fig.2 - typical reverse characteristics fig.3 - typical instantaneous forward voltage characteristi cs fig.1-typical junction capacitance tj=125 tj=25 tj=125 tj=25 tj=25
sangdest microelectronics technical data green products data sheet n0917, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn s brf 1010 0 ct l disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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